We experimentally demonstrate extraction of silicon waveguide geometry with subnanometer accuracy using optical measurements. Effective and group indices of silicon-on-insulator (SOI) waveguides are extracted from the optical measurements. An accurate model linking the geometry of an SOI waveguide to its effective and group indices is used to extract the linewidths and thicknesses within respective errors of 0.37 and 0.26 nm on a die fabricated by IMEC multiproject wafer services. A detailed analysis of the setting of the bounds for the effective and group indices is presented to get the right extraction with improved accuracy.

In this paper, a novel modeling and simulation method for general linear, time-invariant, passive photonic devices and circuits is proposed. This technique, starting from the scattering parameters of the photonic system under study, builds a baseband equivalent state-space model that splits the optical carrier frequency and operates at baseband, thereby significantly reducing the modeling and simulation complexity without losing accuracy. Indeed, it is possible to analytically reconstruct the port signals of the photonic system under study starting from the time-domain simulation of the corresponding baseband equivalent model. However, such equivalent models are complex-valued systems and, in this scenario, the conventional passivity constraints are not applicable anymore. Hence, the passivity constraints for scattering parameters and state-space models of baseband equivalent systems are presented, which are essential for time-domain simulations. Three suitable examples demonstrate the feasibility, accuracy, and efficiency of the proposed method.

We demonstrate the use of stochastic collocation to assess the performance of photonic devices under the effect of uncertainty. This approach combines high accuracy and efficiency in analyzing device variability with the ease of implementation of sampling-based methods. Its flexibility makes it suitable to be applied to a large range ofphotonic devices. We compare the stochastic collocation method with a Monte Carlo technique on a numerical analysis of the variability in silicon directional couplers.